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MITSUBISHI HVIGBT MODULES
CM1200HG-66H
HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE
CM1200HG-66H
IC ............................................................... 1200 A VCES ...................................................... 3300 V High Insulated Type 1-element in a Pack AISiC Baseplate
APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
190 0.5 57 0.25 57 0.25 57 0.25 5-M8 NUTS
17 0.1
(6) C C
124 0.25 140 0.5 44 0.3
(4) C
(2) C
6
4
2
5
3
1
G E E (5) E (3) E (1)
E G C
9 0.1
CIRCUIT DIAGRAM 3-M4 NUTS 14 0.3 61.2 0.5
screwing depth min. 7.7
59.2 0.5 61.2 0.5 12 0.3
8-7 MOUNTING HOLES
screwing depth min. 16.5
18 0.3
41 0.5 22 0.3
+1.0 0
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
1
40.4 0.3
5 0.15
LABEL
38
+1.0 0
48
May 2009
MITSUBISHI HVIGBT MODULES
CM1200HG-66H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
MAXIMUM RATINGS
Symbol VCES VGES IC ICM IE IEM Pc Viso Ve Tj Top Tstg tpsc Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current (Note 2) Conditions VGE = 0V, Tj = 25C VCE = 0V, Tj = 25C DC, Tc = 80C Pulse DC Pulse Tc = 25C, IGBT part RMS, sinusoidal, f = 60Hz, t = 1 min. RMS, sinusoidal, f = 60Hz, QPD 10 pC Ratings 3300 20 1200 2400 1200 2400 13800 10200 5100 -40 ~ +150 -40 ~ +125 -40 ~ +125 10 Unit V V A A A A W V V C C C s
(Note 1)
(Note 1) Maximum power dissipation (Note 3) Isolation voltage Partial discharge extinction voltage Junction temperature Operating temperature Storage temperature Maximum short circuit pulse width VCC = 2200V, VCE VCES, VGE = 15V, Tj = 125C
ELECTRICAL CHARACTERISTICS
Symbol ICES VGE(th) IGES Cies Coes Cres Qg VCE(sat) td(on) tr Eon(10%) td(off) tf Eoff(10%) VEC trr Qrr Erec(10%) Item Collector cutoff current Gate-emitter threshold voltage Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Collector-emitter saturation voltage Turn-on delay time Turn-on rise time Turn-on switching energy (Note 5) Turn-off delay time Turn-off fall time Turn-off switching energy (Note 5) Emitter-collector voltage (Note 2) Reverse recovery time (Note 2) Reverse recovery charge (Note 2) Reverse recovery energy (Note 2), (Note 5) VCE = VCES, VGE = 0V VCE = 10 V, IC = 120 mA, Tj = 25C VGE = VGES, VCE = 0V, Tj = 25C VCE = 10 V, VGE = 0 V, f = 100 kHz, Tj = 25C VCC = 1650 V, IC = 1200 A, VGE = 15 V, Tj = 25C IC = 1200 A (Note 4) Tj = 25C VGE = 15 V Tj = 125C VCC = 1650 V, IC = 1200 A, VGE = 15 V RG = 1.6 , Tj = 125C, Ls = 100 nH Inductive load VCC = 1650 V, IC = 1200 A, VGE = 15 V RG = 1.6 , Tj = 125C, Ls = 100 nH Inductive load IE = 1200 A VGE = 0 V (Note 4) Tj = 25C Tj = 125C Conditions Tj = 25C Tj = 125C Min -- -- 5.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- VCC = 1650 V, IE = 1200 A, VGE = 15 V RG = 1.6 , Tj = 125C, Ls = 100 nH Inductive load -- -- Limits Typ -- 24 6.0 -- 180 18 5.4 15 3.30 3.60 -- -- 1.60 -- -- 1.55 2.80 2.70 -- 800 0.90 Max 15 60 7.0 0.5 -- -- -- -- -- -- 1.60 1.00 -- 2.50 1.00 -- -- -- 1.40 -- -- Unit mA V A nF nF nF C V s s J/P s s J/P V s C J/P
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
May 2009 2
MITSUBISHI HVIGBT MODULES
CM1200HG-66H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
THERMAL CHARACTERISTICS
Symbol Rth(j-c)Q Rth(j-c)R Rth(c-f) Item Thermal resistance Thermal resistance Contact thermal resistance Conditions Junction to Case, IGBT part Junction to Case, FWDi part Case to Fin, grease = 1W/m*K, D(c-f) = 100 m Min -- -- -- Limits Typ -- -- 6.0 Max 9.0 17.5 -- Unit K/kW K/kW K/kW
MECHANICAL CHARACTERISTICS
Symbol Mt Ms Mt m CTI da ds LP CE RCC'+EE' Item Conditions M8: Main terminals screw M6: Mounting screw M4: Auxiliary terminals screw Min 7.0 3.0 1.0 -- 600 26 56 -- -- Limits Typ -- -- -- 1.35 -- -- -- 17 0.14 Max 15.0 6.0 3.0 -- -- -- -- -- -- Unit N*m N*m N*m kg -- mm mm nH m
Mounting torque Mass Comparative tracking index Clearance Creepage distance Internal inductance Internal lead resistance
Tc = 25C
Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125C). 2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 3. Junction temperature (Tj) should not exceed Tjmax rating (150C). 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. 5. Eon(10%) / Eoff(10%) / Erec(10%) are the integral of 0.1VCE x 0.1IC x dt.
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
May 2009 3
MITSUBISHI HVIGBT MODULES
CM1200HG-66H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS (TYPICAL) 2400 Tj = 125C 2000
COLLECTOR CURRENT (A)
TRANSFER CHARACTERISTICS (TYPICAL) 2400 VCE = 20V
VGE = 20V VGE = 15V
COLLECTOR CURRENT (A)
2000
1600
VGE = 12V VGE = 10V
1600
1200 VGE = 8V 800
1200
800
400
400 Tj = 25C Tj = 125C
0
0
1
2
3
4
5
6
0
0
2
4
6
8
10
12
COLLECTOR-EMITTER VOLTAGE (V)
GATE-EMITTER VOLTAGE (V)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 2400 VGE = 15V 2000
COLLECTOR CURRENT (A) EMITTER CURRENT (A)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 2400
2000
1600
1600
1200
1200
800
800
400 Tj = 25C Tj = 125C 0 0 1 2 3 4 5 6
400 Tj = 25C Tj = 125C 0 0 1 2 3 4 5 6
COLLECTOR-EMITTER SATURATION VOLTAGE (V)
EMITTER-COLLECTOR VOLTAGE (V)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
May 2009 4
MITSUBISHI HVIGBT MODULES
CM1200HG-66H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
CAPACITANCE CHARACTERISTICS (TYPICAL) 103
7 5
GATE CHARGE CHARACTERISTICS (TYPICAL) 20 VCE = 1650V, IC = 1200A Tj = 25C 15
3 2
GATE-EMITTER VOLTAGE (V)
Cies
10
CAPACITANCE (nF)
102
7 5 3 2
5
0
101
7 5 3 2
Coes
-5
Cres VGE = 0V, Tj = 25C f = 100kHz
23 5 7 100 23 5 7 101 23 5 7 102
-10
100 -1 10
-15
0
5000
10000
15000
20000
COLLECTOR-EMITTER VOLTAGE (V)
GATE CHARGE (C)
HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 3 VCC = 1650V, VGE = 15V RG = 1.6, Tj = 125C Inductive load Eon 5 6
HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) VCC = 1650V, IC = 1200A VGE = 15V, Tj = 125C Inductive load
2.5
Eon
SWITCHING ENERGIES (J/P)
2
SWITCHING ENERGIES (J/P)
Eoff
4
1.5
3 Eoff 2
1 Erec 0.5
1 Erec
0
0
400
800
1200
1600
2000
2400
0
0
5
10
15
20
COLLECTOR CURRENT (A)
GATE RESISTOR ()
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
May 2009 5
MITSUBISHI HVIGBT MODULES
CM1200HG-66H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 101
7 5 4
FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 102
7 5
REVERSE RECOVERY TIME (s)
3 2
3
SWITCHING TIMES (s)
3 2
td(off)
lrr
2
101
7 5 3 2
103
7 5 3 2
td(on) 100
7 5 4 3 2
tf
100
7 5 3
102 trr
7 5 3 2 7 103 7 104
tr 10-1 2 10
7 103 7 104
2
2
3 45
2
3 45
10-1 2 10
101
2
3 45
2
3 45
COLLECTOR CURRENT (A)
EMITTER CURRENT (A)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
NORMALIZED TRANSIENT THERMAL IMPEDANCE
1.2 Rth(j-c)Q = 9.0K/kW Rth(j-c)R = 17.5K/kW 1.0
0.8
Z
(t) = th( j -c )
R 1-exp
i i=1
n
-
t
ti
0.6
Ri [K/kW] i [sec]
1 0.0059 0.0002
2 0.0978 0.0074
3 0.6571 0.0732
4 0.2392 0.4488
0.4
0.2
0 -3 10 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101 TIME (s)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
May 2009 6
REVERSE RECOVERY CURRENT (A)
VCC = 1650V, VGE = 15V RG = 1.6, Tj = 125C Inductive load
VCC = 1650V, VGE = 15V RG = 1.6, Tj = 125C Inductive load
104
7 5

MITSUBISHI HVIGBT MODULES
CM1200HG-66H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
REVERSE BIAS SAFE OPERATING AREA (RBSOA) 3000 VCC 2200V, VGE = 15V Tj = 125C, RG 1.6 2500
COLLECTOR CURRENT (A) COLLECTOR CURRENT (A)
SHORT CIRCUIT SAFE OPERATING AREA (SCSOA) 20000 VCC 2200V, VGE = 15V Tj = 125C, RG 1.6
15000
2000
1500
10000
1000
5000
500
0
0
1000
2000
3000
4000
0
0
1000
2000
3000
4000
COLLECTOR-EMITTER VOLTAGE (V)
COLLECTOR-EMITTER VOLTAGE (V)
FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) 3000 VCC 2200V, di/dt 5400A/s Tj = 125C
REVERSE RECOVERY CURRENT (A)
2500
2000
1500
1000
500
0
0
1000
2000
3000
4000
COLLECTOR-EMITTER VOLTAGE (V)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
May 2009 7

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